收藏本站
NTGD4169F
Power MOSFET and
Schottky Diode
30 V, 2.9 A, N ? Channel with Schottky
Barrier Diode, TSOP ? 6
Features
? Fast Switching
? Low Gate Change
? Low R DS(on)
? Low V F Schottky Diode
? Independently Connected Devices to Provide Design Flexibility
? This is a Pb ? Free Device
Applications
? DC ? DC Converters
? Portable Devices like PDA’s, Cellular Phones, and Hard Drives
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
V (BR)DSS
30 V
V R Max
30 V
http://onsemi.com
N ? CHANNEL MOSFET
R DS(on) Max
90 m W @ 4.5 V
125 m W @ 2.5 V
SCHOTTKY DIODE
V F Max
0.53 V
A
D
I D Max
2.6 A
2.2 A
I F Max
1.0 A
Parameter
Drain ? to ? Source Voltage
Symbol
V DSS
Value
30
Unit
V
Gate ? to ? Source Voltage
N ? Channel Steady State
Continuous Drain
Current (Note 1)
t ≤ 5 s
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
V GS
I D
± 12
2.6
1.9
2.9
V
A
G
S
K
t ≤ 5 s
Power Dissipation Steady State T A = 25 ° C
(Note 1)
Pulsed Drain Current             t p = 10 m s
Operating Junction and Storage Temperature
P D
I DM
T J , T STG
0.9
1.1
8.6
? 25 to
150
W
A
° C
N ? Channel MOSFET
1
Schottky Diode
MARKING
DIAGRAM
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8 ″ from case for 10 s)
I S
T L
0.9
260
A
° C
TSOP ? 6
CASE 318G
STYLE 15
1
TD M G
G
SCHOTTKY MAXIMUM RATINGS (T J = 25 ° C unless otherwise stated)
Parameter Symbol Value Unit
Peak Repetitive Reverse Voltage V RRM 30 V
TD = Specific Device Code
M = Date Code
G = Pb ? Free Package
(Note: Microdot may be in either location)
DC Blocking Voltage
Average Rectified Forward Current
V R
I F
30
1
V
A
PIN CONNECTION
THERMAL RESISTANCE RATINGS
Parameter
Junction ? to ? Ambient – Steady State (Note
1)
Symbol
R q JA
Value
140
Unit
° C/W
A
S
1
2
6
5
K
N/C
D
Junction ? to ? Ambient – t ≤ 5 s (Note 1) R q JA 110 ° C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces).
G 3 4
(Top View)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
? Semiconductor Components Industries, LLC, 2008
May, 2008 ? Rev. 1
1
Publication Order Number:
NTGD4169F/D
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
NTGS1135PT1G MOSFET P-CH 8V 4.6A 6-TSOP
NTGS3130NT1G MOSFET N-CH SGL 20V 5.6A 6-TSOP
NTGS3441BT1G MOSFET P-CH 20V 2.2A 6-TSOP
NTGS3441PT1G MOSFET P-CH 20V 1.8A 6-TSOP
NTGS3441T1 MOSFET P-CH 20V 1.65A 6-TSOP
NTGS3443BT1G MOSFET P-CH 20V 2.7A 6-TSOP
NTGS3443T1 MOSFET P-CH 20V 2.2A 6-TSOP
NTGS3446T1 MOSFET N-CH 20V 2.5A 6-TSOP
相关代理商/技术参数
NTGF3123F 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:High Efficiency DC-DC Converters
NTGS1135P 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET −8 V, −5.8 A, Single P−Channel, TSOP−6
NTGS1135PT1G 功能描述:MOSFET 8V Power Mosfet P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTGS3130N 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 20 V, 5.6 A Single N-Channel, TSOP-6
NTGS3130NT1G 功能描述:MOSFET POWER MOSFET 20V 5.6A SNGL CH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTGS3136P 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET -20 V, -5.8 A, Single P-Channel, TSOP-6
NTGS3136PT1G 功能描述:MOSFET PFET TSOP6 20V/8V TR RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTGS3433T1 功能描述:MOSFET -12V -3.3A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube